APTM10DUM05TG [MICROSEMI]

This dual common source MOSFET power module features Power MOS V® technology, offering low RDSon (4.5mΩ typ), low input and Miller capacitance, low gate charge, and avalanche energy rating. It includes Kelvin source for easy drive, very low stray inductance with symmetrical design, internal thermistor for temperature monitoring, and high integration. Benefits include outstanding high-frequency performance, direct mounting to heatsink, low junction-to-case thermal resistance, solderable terminals for easy PCB mounting, low profile, and RoHS compliance.