APT54GA60BD30 [Microchip]

POWER MOS 8® is a high speed Punch-Through switch-mode IGBT with low Eoff achieved through advanced silicon design and lifetime control. It features a reduced E CE(ON) tradeoff for superior efficiency, low gate charge, and a greatly reduced ratio of C res / C ies for excellent noise immunity, short delay times, and simple gate drive. The intrinsic chip gate resistance and capacitance control di/dt during switching, resulting in low EMI even at high frequencies. Key advantages include fast switching, low conduction loss, and RoHS compliance.