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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. APT6010B2FLLG Microchip

    APT6010B2FLLG [Microchip]

    APT6010B2FLLG
    APT6010B2FLLG

    Part No:

    APT6010B2FLLG

    Category:

    Transistors

    Manufacturer:

    Microchip

    Description:

    600V, 19A N-Channel FREDFET with low trr and low gate charge.

    RoHS Status:

    Product FAQ

    1. Is APT6010B2FLLG available for RFQ?

    Yes. APT6010B2FLLG by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APT6010B2FLLG?

    Pricing for APT6010B2FLLG can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APT6010B2FLLG?

    APT6010B2FLLG is a Microchip Transistors with Zero Gate Voltage Drain Current 125C: 1000µA and Thermal Resistance Junction To Case: 0.37°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APT6010B2FLLG?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APT6010B2FLLG be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APT6010B2FLLG?

    Yes. If APT6010B2FLLG is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    APT6010B2FLLG

    Manufacturer:

    Microchip

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Power Dissipation
    335W
    Gate Source Voltage
    ±30V
    Continuous Drain Current (100C)
    12A
    Continuous Drain Current (25C)
    19A
    Pulsed Drain Current
    65A
    Gate Threshold Voltage
    2.5V ~ 5V
    Thermal Resistance Junction To Case
    0.37°C/W
    Input Capacitance
    3550pF
    Output Capacitance
    325pF
    Total Gate Charge
    90 nC
    Reverse Transfer Capacitance
    36pF
    Operating Temperature
    -55°C ~ 150°C
    Package
    TO-247, D3PAK
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Avalanche Current
    9A
    Avalanche Energy
    495 mJ
    Breakdown Voltage
    600V
    Case To Sink Thermal Resistance
    0.15°C/W
    Diode Forward Voltage
    1.2V
    Fall Time
    18 ns
    Forward Transconductance
    17 S
    Gate Drain Charge
    37 nC
    Gate Source Charge
    19 nC
    Gate Source Leakage Current
    ±100 nA
    Mounting Torque In Lbf
    10 in·lbf
    Mounting Torque N M
    1.1 N·m
    On Resistance
    0.37Ω
    Package Weight G
    6.2 g
    Package Weight Oz
    0.22 oz
    Peak Recovery Dv Dt
    20V/ns
    Reverse Recovery Charge 125C
    1.56 µC
    Reverse Recovery Charge 25C
    0.65 µC
    Reverse Recovery Current 125C
    9.2A
    Reverse Recovery Current 25C
    6.7A
    Reverse Recovery Time 125C Max
    380 ns
    Reverse Recovery Time 25C Max
    200 ns
    Rise Time
    23 ns
    Soldering Temperature
    300°C
    Turn Off Delay Time
    60 ns
    Turn On Delay Time
    20 ns
    Zero Gate Voltage Drain Current 125C
    1000µA
    Zero Gate Voltage Drain Current 25C
    250µA

    Products Detail

    Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

    Key Features

    • Fast switching with low EMI, Low trr for high reliability, Ultra low Crss for improved noise immunity, Low gate charge, Avalanche energy rated, RoHS compliant

    Application scenarios

    • ZVS phase shifted and other full bridge
    • Half bridge
    • PFC and other boost converter
    • Buck converter
    • Single and two switch forward
    • Flyback
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method
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