APT70SM70B [MICROSEMI]

Silicon carbide power MOSFET solutions with Microsemi-proprietary passivation technology provides maximum SiC benefits over silicon MOSFET solutions that include higher energy conversion efficiency with 10x higher breakdown field resistance resulting in lower RDS(on); lower switching losses due to temperature-independent switching behavior for stable high temperature performance and 2x higher electron saturation; improved system cooling with 3x higher band gap energy to operate at higher junction temperatures; and higher current capabilities with 3x higher thermal conductivity for higher power density. Faster switching frequencies combined with the above characteristics provide higher efficiency, lower power losses for power topologies that lower total cost of ownership with higher reliability and efficiency, lower passive and system costs, and smaller heat sinks. Key features include ultra low sensitivity of R to temperature, fast switching with low EMI/RFI, low switching energy, low R temperature coefficient for improved efficiency, ultra low gate resistance, and RoHS compliant.