APT8030B2VRG [Microchip]

A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low C rss (Miller) capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. Features include fast switching with low EMI/RFI, low R DS(on), ultra low C rss for improved noise immunity, low gate charge, avalanche energy rated, and RoHS compliant.