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    5. APTC80DA15T1G MICROSEMI

    APTC80DA15T1G [MICROSEMI]

    APTC80DA15T1G
    APTC80DA15T1G

    Part No:

    APTC80DA15T1G

    Category:

    Transistors

    Manufacturer:

    MICROSEMI

    Description:

    800V Super Junction MOSFET power module with 150mΩ RDS(on) and 28A continuous drain current.

    Datasheet:

    Product FAQ

    1. Is APTC80DA15T1G available for RFQ?

    Yes. APTC80DA15T1G by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APTC80DA15T1G?

    Pricing for APTC80DA15T1G can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APTC80DA15T1G?

    APTC80DA15T1G is a MICROSEMI Transistors with Junction To Case Thermal Resistance Transistor: 0.45°C/W and Junction To Case Thermal Resistance Diode: 1.2°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APTC80DA15T1G?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APTC80DA15T1G be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APTC80DA15T1G?

    Yes. If APTC80DA15T1G is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    APTC80DA15T1G

    Manufacturer:

    MICROSEMI

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Gate Source Voltage
    ±30V
    Continuous Drain Current (25C)
    28A
    Pulsed Drain Current
    110A
    Gate Threshold Voltage
    2.1V ~ 3.9V
    Input Capacitance
    4507pF
    Output Capacitance
    2092pF
    Total Gate Charge
    180 nC
    Reverse Transfer Capacitance
    108pF
    Package
    SP1
    Storage Temperature
    -40°C ~ 125°C
    Avalanche Current
    17A
    Continuous Drain Current 80C
    21A
    Diode Dc Forward Current
    30A
    Diode Forward Voltage
    3.1V
    Diode Peak Reverse Voltage
    1200V
    Diode Reverse Leakage Current 125C
    500µA
    Diode Reverse Leakage Current 25C
    100µA
    Drain Source Breakdown Voltage
    800V
    Drain Source On Resistance
    150mΩ
    Fall Time
    35 ns
    Gate Drain Charge
    90 nC
    Gate Source Charge
    22 nC
    Gate Source Leakage Current
    ±150 nA
    Isolation Voltage
    2500V
    Junction To Case Thermal Resistance Diode
    1.2°C/W
    Junction To Case Thermal Resistance Transistor
    0.45°C/W
    Max Power Dissipation
    277W
    Mounting Torque
    2.5 N.m ~ 4.7 N.m
    Ntc Beta
    3952 K
    Ntc Resistance 25C
    50kΩ
    Operating Case Temperature
    -40°C ~ 100°C
    Operating Junction Temperature
    -40°C ~ 150°C
    Package Weight
    80 g
    Repetitive Avalanche Energy
    0.5 mJ
    Reverse Recovery Charge 125C
    1700 nC
    Reverse Recovery Charge 25C
    360 nC
    Reverse Recovery Time 125C
    380 ns
    Reverse Recovery Time 25C
    300 ns
    Rise Time
    13 ns
    Single Pulse Avalanche Energy
    670 mJ
    Turn Off Delay Time
    83 ns
    Turn Off Switching Energy 125C
    342 µJ
    Turn Off Switching Energy 25C
    278 µJ
    Turn On Delay Time
    10 ns
    Turn On Switching Energy 125C
    850 µJ
    Turn On Switching Energy 25C
    486 µJ
    Zero Gate Voltage Drain Current 125C
    375µA
    Zero Gate Voltage Drain Current 25C
    50µA

    Products Detail

    Super Junction MOSFET power module featuring ultra low RDSon, low Miller capacitance, ultra low gate charge, avalanche energy rated, and very rugged design. Includes internal thermistor for temperature monitoring and high integration level. Benefits include outstanding high-frequency performance, direct mounting to heatsink (isolated package), low junction-to-case thermal resistance, solderable terminals for easy PCB mounting, low profile, and RoHS compliance.

    Key Features

    • Ultra low RDSon, Low Miller capacitance, Ultra low gate charge, Avalanche energy rated, Very rugged, Very low stray inductance, Internal thermistor for temperature monitoring, High level of integration, Outstanding performance at high frequency operation, Direct mounting to heatsink (isolated package), Low junction to case thermal resistance, Solderable terminals for easy PCB mounting, Low profile, RoHS Compliant

    Application scenarios

    • AC and DC motor control
    • Switched Mode Power Supplies
    • Power Factor Correction

    Documents

    Datasheets:

    APTC80DA15T1GPower Products Catalog
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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