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    1. Home/
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    3. Discrete Semiconductors/
    4. Discrete & Power Modules/
    5. APTGF150A60T3AG MICROSEMI

    APTGF150A60T3AG [MICROSEMI]

    APTGF150A60T3AG
    APTGF150A60T3AG

    Part No:

    APTGF150A60T3AG

    Category:

    Discrete & Power Modules

    Manufacturer:

    MICROSEMI

    Description:

    NPT IGBT Power Module with 600V collector-emitter breakdown voltage and 150A continuous collector current at 100°C.

    RoHS Status:

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Isolation Voltage
    4000V
    Operating Junction Temperature
    -40°C ~ 150°C
    Gate Emitter Voltage
    ±20V
    Package
    SP3
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Storage Temperature
    -40°C ~ 125°C
    Collector Emitter Breakdown Voltage
    600V
    Collector Emitter Saturation Voltage 125C
    2.2V
    Collector Emitter Saturation Voltage 25C
    2.5V
    Continuous Collector Current 100C
    150A
    Continuous Collector Current 25C
    230A
    Dc Forward Current
    120A
    Diode Forward Voltage 120A
    1.7V
    Fall Time 25C
    20ns
    Gate Charge
    480nC
    Gate Emitter Leakage Current
    400nA
    Gate Threshold Voltage
    4.5V ~ 6.5V
    Input Capacitance
    9nF
    Junction To Case Thermal Resistance Diode
    0.36°C/W
    Junction To Case Thermal Resistance Igbt
    0.15°C/W
    Max Power Dissipation
    833W
    Maximum Peak Reverse Voltage
    600V
    Operating Case Temperature
    -40°C ~ 100°C
    Package Weight
    110g
    Pulsed Collector Current
    400A
    RBSOA
    400A@480V
    Reverse Leakage Current 125C
    600µA
    Reverse Leakage Current 25C
    35µA
    Reverse Recovery Charge 125C
    1380nC
    Reverse Recovery Charge 25C
    200nC
    Reverse Recovery Time 125C
    140ns
    Reverse Recovery Time 25C
    70ns
    Reverse Transfer Capacitance
    0.8nF
    Rise Time 25C
    10ns
    Short Circuit Current
    900A
    Thermistor B Value
    3952K
    Thermistor Resistance 25C
    50kΩ
    Turn Off Delay Time 25C
    130ns
    Turn Off Switching Energy 125C
    6mJ
    Turn On Delay Time 25C
    25ns
    Turn On Switching Energy 125C
    2mJ

    Products Detail

    Non Punch Through (NPT) Fast IGBT module featuring low voltage drop, low tail current, switching frequency up to 50 kHz, soft recovery parallel diodes, low diode VF, low leakage current, RBSOA and SCSOA rated. Includes very low stray inductance, Kelvin emitter for easy drive, internal thermistor for temperature monitoring, high level of integration, and AlN substrate for improved thermal performance. Benefits include direct mounting to heatsink, low junction to case thermal resistance, solderable terminals for easy PCB mounting, low profile, and RoHS compliance.

    Key Features

    • Non Punch Through (NPT) Fast IGBT
    • Low voltage drop
    • Low tail current
    • Switching frequency up to 50 kHz
    • Soft recovery parallel diodes
    • Low diode VF
    • Low leakage current
    • RBSOA and SCSOA rated
    • Very low stray inductance
    • Kelvin emitter for easy drive
    • Internal thermistor for temperature monitoring
    • High level of integration
    • AlN substrate for improved thermal performance
    • Direct mounting to heatsink
    • Low junction to case thermal resistance
    • Solderable terminals for easy PCB mounting
    • Low profile
    • RoHS Compliant

    Application scenarios

    • Welding converters
    • Switched Mode Power Supplies
    • Uninterruptible Power Supplies
    • Motor control

    Documents

    Datasheets:

    APTGF150A60T3AG
    Product FAQ

    1. Is APTGF150A60T3AG available for RFQ?

    Yes. APTGF150A60T3AG by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APTGF150A60T3AG?

    Pricing for APTGF150A60T3AG can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APTGF150A60T3AG?

    APTGF150A60T3AG is a MICROSEMI Discrete & Power Modules with Collector Emitter Saturation Voltage 125C: 2.2V and Junction To Case Thermal Resistance Diode: 0.36°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APTGF150A60T3AG?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APTGF150A60T3AG be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APTGF150A60T3AG?

    Yes. If APTGF150A60T3AG is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Discrete & Power Modules parts or compatible alternatives.

    RFQ

    Part Number:

    APTGF150A60T3AG

    Manufacturer:

    MICROSEMI

    Looking for Pricing? Contact us for volume pricing.

    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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