APTM120DA29TG [Microchip]

APTM120DA29TG Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 10300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 34A, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 1200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

APTM120DA29TG Features

the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 34A
a 1200V drain to source voltage (Vdss)

APTM120DA29TG Applications

There are a lot of Microsemi Corporation
APTM120DA29TG applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples