APTM120DSK57T3G [MICROSEMI]

Name: APTM120DSK57T3G
Brand: MICROSEMI
SKU: APTM120DSK57T3G
Availability: InStock

Part No:

APTM120DSK57T3G

Transistors

Manufacturer:

MICROSEMI

Description:

Dual Buck chopper DSS power module with 1200V breakdown voltage and 570mΩ typical RDSon.

RoHS Status:

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

Power Dissipation

390W

Gate Source Voltage

±30V

Continuous Drain Current (25C)

17A

Pulsed Drain Current

68A

Gate Threshold Voltage

3V ~ 5V

Input Capacitance

5155pF

Output Capacitance

770pF

Total Gate Charge

187 nC

Rds On

684mΩ

Reverse Transfer Capacitance

130pF

Package

SP3

RoHS Status

RoHS Compliant

RoHS Status

RoHS Compliant

Storage Temperature

-40°C ~ 125°C

Avalanche Current

22A

Breakdown Voltage

1200V

Continuous Drain Current 80C

13A

Diode Dc Forward Current

25A

Diode Forward Voltage 125C

1.9V

Diode Forward Voltage 25C

2.1V

Diode Peak Reverse Voltage

1200V

Diode Reverse Leakage 125C

500µA

Diode Reverse Leakage 25C

250µA

Diode Reverse Recovery Charge 125C

4.5 µC

Diode Reverse Recovery Charge 25C

2.3 µC

Diode Reverse Recovery Time 125C

190 ns

Diode Reverse Recovery Time 25C

95 ns

Drain Source On Resistance

684mΩ

Drain Source On Resistance Typ

570mΩ

Fall Time

45 ns

Gate Drain Charge

120 nC

Gate Source Charge

24 nC

Gate Source Leakage Current

±100 nA

Isolation Voltage

2500V

Junction To Case Thermal Resistance Diode

1.2°C/W

Junction To Case Thermal Resistance Transistor

0.32°C/W

Mounting Torque

2.5 N.m ~ 4.7 N.m

Operating Case Temperature

-40°C ~ 100°C

Operating Junction Temperature

-40°C ~ 150°C

Package Weight

110 g

Repetitive Avalanche Energy

50 mJ

Rise Time

15 ns

Single Pulse Avalanche Energy

3000 mJ

Thermistor Constant B

3952 K

Thermistor Resistance 25C

50kΩ

Turn Off Delay Time

160 ns

Turn Off Switching Energy 125C

857 µJ

Turn Off Switching Energy 25C

685 µJ

Turn On Delay Time

20 ns

Turn On Switching Energy 125C

1565 µJ

Turn On Switching Energy 25C

990 µJ

Zero Gate Voltage Drain Current 125C

1000µA

Zero Gate Voltage Drain Current 25C

250µA

Products Detail

This power module features Power MOS 7® MOSFETs with low RDSon, low input and Miller capacitance, and low gate charge. It includes Kelvin source for easy drive, very low stray inductance, symmetrical design, and an internal thermistor for temperature monitoring. The module is designed for high frequency operation, with direct mounting to heatsink (isolated package), low junction to case thermal resistance, solderable terminals for easy PCB mounting, and low profile. Each leg can be paralleled to double current capability. RoHS compliant.

Key Features

Power MOS 7® MOSFETs, Low RDSon, Low input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged, Kelvin source for easy drive, Very low stray inductance, Symmetrical design, Internal thermistor for temperature monitoring, High level of integration, Outstanding performance at high frequency operation, Direct mounting to heatsink (isolated package), Low junction to case thermal resistance, Solderable terminals for easy PCB mounting, Low profile, Each leg can be easily paralleled to achieve a single buck of twice the current capability, RoHS Compliant

Application scenarios

AC and DC motor control
Switched Mode Power Supplies

Documents

Datasheets:

APTM120DSK57T3G

Product FAQ

1. Is APTM120DSK57T3G available for RFQ?

Yes. APTM120DSK57T3G by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for APTM120DSK57T3G?

Pricing for APTM120DSK57T3G can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of APTM120DSK57T3G?

APTM120DSK57T3G is a MICROSEMI Transistors with Junction To Case Thermal Resistance Transistor: 0.32°C/W and Junction To Case Thermal Resistance Diode: 1.2°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for APTM120DSK57T3G?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can APTM120DSK57T3G be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to APTM120DSK57T3G?

Yes. If APTM120DSK57T3G is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Transistors parts or compatible alternatives.

RFQ

Part Number:

APTM120DSK57T3G

Manufacturer:

MICROSEMI

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.