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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. APTM20UM05SG Microchip

    APTM20UM05SG [Microchip]

    APTM20UM05SG
    APTM20UM05SG

    Part No:

    APTM20UM05SG

    Category:

    Transistors

    Manufacturer:

    Microchip

    Description:

    MOSFET (Metal Oxide) N-Channel Bulk 5m ? @ 158.5A, 10V ±30V 27400pF @ 25V 448nC @ 10V 200V J3 Module

    RoHS Status:

    Product FAQ

    1. Is APTM20UM05SG available for RFQ?

    Yes. APTM20UM05SG by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APTM20UM05SG?

    Pricing for APTM20UM05SG can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APTM20UM05SG?

    APTM20UM05SG is a Microchip Transistors with Packaging: Bulk and Current - Continuous Drain (Id) @ 25°C: 317A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APTM20UM05SG?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APTM20UM05SG be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APTM20UM05SG?

    Yes. If APTM20UM05SG is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    APTM20UM05SG

    Manufacturer:

    Microchip

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Chassis Mount
    Mounting Type
    Chassis Mount
    Package / Case
    J3 Module
    Transistor Element Material
    SILICON
    Operating Temperature
    -40°C~150°C TJ
    Packaging
    Bulk
    Published
    2004
    JESD-609 Code
    e1
    Pbfree Code
    yes
    Part Status
    Discontinued
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    4
    ECCN Code
    EAR99
    Terminal Finish
    TIN SILVER COPPER
    Technology
    MOSFET (Metal Oxide)
    Terminal Position
    UPPER
    Terminal Form
    UNSPECIFIED
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    JESD-30 Code
    R-XUFM-X4
    Qualification Status
    Not Qualified
    Number of Elements
    1
    Configuration
    SINGLE WITH BUILT-IN DIODE AND RESISTOR
    Power Dissipation-Max
    1136W Tc
    Operating Mode
    ENHANCEMENT MODE
    Case Connection
    ISOLATED
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Vgs(th) (Max) @ Id
    5V @ 10mA
    Input Capacitance (Ciss) (Max) @ Vds
    27400pF @ 25V
    Current - Continuous Drain (Id) @ 25°C
    317A Tc
    Gate Charge (Qg) (Max) @ Vgs
    448nC @ 10V
    Drain to Source Voltage (Vdss)
    200V
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±30V
    Continuous Drain Current (ID)
    317A
    Drain-source On Resistance-Max
    0.005Ohm
    Pulsed Drain Current-Max (IDM)
    1268A
    DS Breakdown Voltage-Min
    200V
    Avalanche Energy Rating (Eas)
    2500 mJ
    RoHS Status
    RoHS Compliant

    Products Detail

    APTM20UM05SG Overview


    Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2500 mJ.A device's maximal input capacitance is 27400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 317A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 1268A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

    APTM20UM05SG Features


    the avalanche energy rating (Eas) is 2500 mJ
    a continuous drain current (ID) of 317A
    based on its rated peak drain current 1268A.
    a 200V drain to source voltage (Vdss)


    APTM20UM05SG Applications


    There are a lot of Microsemi Corporation
    APTM20UM05SG applications of single MOSFETs transistors.


    • Consumer Appliances
    • Lighting
    • Uninterruptible Power Supply
    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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