Is APTM50DUM17G available for RFQ?

Yes. APTM50DUM17G by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

Why is there no fixed price for APTM50DUM17G?

Pricing for APTM50DUM17G can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

What are the key specifications of APTM50DUM17G?

APTM50DUM17G is a MICROSEMI Transistors with APT35GP120B2DQ2G Max Current At Frequency: 24A at 20kHz, 15A at 40kHz and APT45GP120B2DQ2G Max Current At Frequency: 29A at 20kHz, 18A at 40kHz. Review the product details or submit an RFQ if you need confirmation before purchase.

How fast can I get a quote for APTM50DUM17G?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

How soon can APTM50DUM17G be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

Can you suggest alternatives to APTM50DUM17G?

Yes. If APTM50DUM17G is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Transistors parts or compatible alternatives.

APTM50DUM17G - MICROSEMI | Electronic Components

Name: APTM50DUM17G
Brand: MICROSEMI
SKU: APTM50DUM17G
Availability: InStock

IGBT products from Microsemi provide high-quality solutions for a wide range of high-voltage, high-power applications. The switching frequency range spans from DC for minimal conduction loss to 150 kHz for very-high-power-density switch mode power supply (SMPS) applications. The frequency range for each product type is shown in the following graph. Each IGBT product represents the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application. There are six product series that utilize three different IGBT technologies: non-punch-through (NPT), punch-through (PT), and field stop. Silicon Carbide (SiC) is the ideal technology for higher switching frequency, higher efficiency, and higher power (>650 V) applications. SiC MOSFET and SiC Schottky barrier diode product lines from Microsemi increase your system efficiency over silicon MOSFET and IGBT solutions while lowering your total cost of ownership by enabling downsized systems and smaller/lower cost cooling.