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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. APTMC120AM09CT3AG MICROSEMI

    APTMC120AM09CT3AG [MICROSEMI]

    APTMC120AM09CT3AG
    APTMC120AM09CT3AG

    Part No:

    APTMC120AM09CT3AG

    Category:

    Transistors

    Manufacturer:

    MICROSEMI

    Description:

    SiC MOSFET Power Module with integrated Schottky diode, 1200V, 295A, 9mΩ.

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Power Dissipation
    1250W
    Gate Source Voltage
    -10V ~ 25V
    Continuous Drain Current (25C)
    295A
    Pulsed Drain Current
    590A
    Gate Threshold Voltage
    2.1V ~ 2.4V
    Thermal Resistance Junction To Case
    0.1°C/W
    Input Capacitance
    11nF
    Output Capacitance
    0.88nF
    Total Gate Charge
    644 nC
    Reverse Transfer Capacitance
    0.06nF
    Supply Voltage

    Products Detail

    Phase leg DSS SiC MOSFET Power Module featuring high speed switching, low RDS(on), ultra low loss, zero reverse recovery Schottky diode, very low stray inductance, Kelvin source for easy drive, internal thermistor for temperature monitoring, high level of integration, AlN substrate for improved thermal performance. Benefits include outstanding performance at high frequency operation, direct mounting to heatsink (isolated package), low junction to case thermal resistance, solderable terminals for power and signal, low profile, and RoHS compliance.

    Key Features

    • SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss
    • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
    • Very low stray inductance
    • Kelvin source for easy drive
    • Internal thermistor for temperature monitoring
    • High level of integration
    • AlN substrate for improved thermal performance
    • Outstanding performance at high frequency operation
    • Direct mounting to heatsink (isolated package)
    • Low junction to case thermal resistance
    • Solderable terminals both for power and signal for easy PCB mounting
    • Low profile
    • RoHS Compliant

    Application scenarios

    • Welding converters
    • Switched Mode Power Supplies
    • Uninterruptible Power Supplies
    • Motor control

    Documents

    Datasheets:

    APTMC120AM09CT3AG
    Product FAQ

    1. Is APTMC120AM09CT3AG available for RFQ?

    Yes. APTMC120AM09CT3AG by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APTMC120AM09CT3AG?

    Pricing for APTMC120AM09CT3AG can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APTMC120AM09CT3AG?

    APTMC120AM09CT3AG is a MICROSEMI Transistors with Diode Junction To Case Thermal Resistance: 0.28°C/W and Operating Junction Temperature Max Mosfet: 150°C. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APTMC120AM09CT3AG?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APTMC120AM09CT3AG be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APTMC120AM09CT3AG?

    Yes. If APTMC120AM09CT3AG is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    APTMC120AM09CT3AG

    Manufacturer:

    MICROSEMI

    Looking for Pricing? Contact us for volume pricing.

    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product
    1200V
    Storage Temperature
    -40°C ~ 125°C
    Continuous Drain Current 80C
    220A
    Diode Forward Current
    80A
    Diode Forward Voltage
    3.3V
    Diode Forward Voltage Min
    3.1V
    Diode Junction To Case Thermal Resistance
    0.28°C/W
    Diode Peak Reverse Voltage
    1200V
    Diode Reverse Recovery Charge
    1.62 µC
    Diode Reverse Recovery Current
    54A
    Diode Reverse Recovery Time
    45 ns
    Drain Source On Resistance
    9mΩ
    Fall Time
    70 ns
    Gate Drain Charge
    200 nC
    Gate Source Charge
    184 nC
    Internal Gate Resistance
    1.5Ω
    Isolation Voltage
    4000V
    Mounting Torque
    2 N.m ~ 3 N.m
    Ntc Beta 25 85
    3952 K
    Ntc Beta Tolerance
    4%
    Ntc Resistance 25C
    50kΩ
    Ntc Resistance Tolerance
    5%
    Operating Case Temperature
    -40°C ~ 100°C
    Operating Junction Temperature
    -40°C
    Operating Junction Temperature Max Diode
    175°C
    Operating Junction Temperature Max Mosfet
    150°C
    Package Weight
    110 g
    Rise Time
    40 ns
    Turn Off Delay Time
    150 ns
    Turn Off Energy
    2.4 mJ
    Turn On Delay Time
    35 ns
    Turn On Energy
    4.4 mJ
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