DRF1200 [Microchip]

DRF hybrid RF power amplifier products enable superior power density by integrating RF MOSFETs with gate drivers in a single package with excellent thermal performance. Integration maximizes amplifier performance by minimizing transmission line parasitics between the driver and the MOSFET.

Products are offered with the following configurations.

• DRF1200, DRF1201, DRF1211: single-ended topology for simplest design
• DRF1300, DRF1301, DRF1311: push-pull topology for easy design with outstanding 2^nd harmonic suppression
• DRF1400: half-bridge topology for higher efficiency and power density
• DRF1510: full-bridge topology for most compact, most efficient Class-D RF amplifier in a single package

Reference designs are available as a learning tool and development platform to enable minimal time-to-market, including detailed application note, circuit schematics, bill of materials, circuit board layout, theory of operation, and performance data.

• DRF1200-CLASS-E: single ended topology, 13.56 MHz
• DRF1400-CLASS-D: half-bridge topology, 13.56 MHz
• DRF1510-CLASS-D: full-bridge topology, 13.56 MHz

HF power amplifiers from 2-30 MHz, 1-4.5 kW per device, up to 92% efficiency at 13.56 MHz
• Class-D, Class-E RF generators
• Switch-mode power amplifiers
• Plasma
• Pulse generators
• CO2 Lasers
• Semiconductor capital equipment
• Flat-panel displays, industrial glass, photovoltaic
• Induction heating, defrosting, drying
• Hazardous or toxic gas, waste treatment
• Lighting
• Ignition
• Ultrasonic cavitation