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ISL8200MIRZ-T
RENESAS
Part number
Schottky barrier devices are available in single beam lead, dual T, ring quad, monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Diodes are available with barrier heights as low as 240mV and up to 625mV per junction. These diodes are suitable for single ended RF mixer, level detectors and phase detectors.
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