The ICPB1020 is a 100 W, 0.25μm GaN SiC discrete HEMT that operates from DC-14 GHz. The design is optimized for power and efficiency using field plate technology and can deliver up to 50 Watts (50 dB) P3dB nominal output power across the band with up to 65% PAE and 16 dB power gain at 6 GHz.