JAN2N6299 [Microchip]

JAN2N6299 Overview

DC current gain in this device equals 750 @ 4A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 16mA, 4A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 4MHz.

JAN2N6299 Features

the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz

JAN2N6299 Applications

There are a lot of Microsemi Corporation
JAN2N6299 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting