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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. JAN2N6300 Microchip

    JAN2N6300 [Microchip]

    JAN2N6300
    JAN2N6300

    Part No:

    JAN2N6300

    Category:

    Transistors

    Manufacturer:

    Microchip

    Description:

    NPN - Darlington -55°C~200°C TJ 500?A ICBO 1 Elements 2 Terminations SILICON TO-213AA, TO-66-2 Bulk Through Hole

    RoHS Status:

    Product FAQ

    1. Is JAN2N6300 available for RFQ?

    Yes. JAN2N6300 by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for JAN2N6300?

    Pricing for JAN2N6300 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of JAN2N6300?

    JAN2N6300 is a Microchip Transistors with Packaging: Bulk and DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A 3V and Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for JAN2N6300?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can JAN2N6300 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to JAN2N6300?

    Yes. If JAN2N6300 is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    JAN2N6300

    Manufacturer:

    Microchip

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
    Factory Lead Time
    22 Weeks
    Contact Plating
    Lead, Tin
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-213AA, TO-66-2
    Transistor Element Material
    SILICON
    Operating Temperature
    -55°C~200°C TJ
    Packaging
    Bulk
    Series
    Military, MIL-PRF-19500/539
    Published
    2007
    JESD-609 Code
    e0
    Pbfree Code
    no
    Part Status
    Active
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    2
    ECCN Code
    EAR99
    Terminal Finish
    Tin/Lead (Sn/Pb)
    Terminal Position
    BOTTOM
    Terminal Form
    PIN/PEG
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Pin Count
    2
    JESD-30 Code
    O-MBFM-P2
    Qualification Status
    Qualified
    Number of Elements
    1
    Polarity
    NPN
    Element Configuration
    Single
    Case Connection
    COLLECTOR
    Power - Max
    75W
    Transistor Application
    SWITCHING
    Transistor Type
    NPN - Darlington
    Collector Emitter Voltage (VCEO)
    60V
    DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 4A 3V
    Vce Saturation (Max) @ Ib, Ic
    3V @ 80mA, 8A
    Current - Collector (Ic) (Max)
    8A
    Transition Frequency
    4MHz
    Collector Emitter Saturation Voltage
    2V
    Collector Base Voltage (VCBO)
    60V
    Emitter Base Voltage (VEBO)
    5V
    RoHS Status
    RoHS Compliant

    Products Detail

    JAN2N6300 Overview


    As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 4A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 4MHz.

    JAN2N6300 Features


    the DC current gain for this device is 750 @ 4A 3V
    a collector emitter saturation voltage of 2V
    the vce saturation(Max) is 3V @ 80mA, 8A
    the emitter base voltage is kept at 5V
    a transition frequency of 4MHz


    JAN2N6300 Applications


    There are a lot of Microsemi Corporation
    JAN2N6300 applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting

    Documents

    Datasheets:

    2N6300, 2N6301
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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