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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. JAN2N6758 Microchip

    JAN2N6758 [Microchip]

    JAN2N6758
    JAN2N6758

    Part No:

    JAN2N6758

    Category:

    Transistors

    Manufacturer:

    Microchip

    Description:

    MOSFET (Metal Oxide) N-Channel Bulk 490m ? @ 9A, 10V ±20V 39nC @ 10V 200V TO-204AA, TO-3

    RoHS Status:

    Product FAQ

    1. Is JAN2N6758 available for RFQ?

    Yes. JAN2N6758 by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for JAN2N6758?

    Pricing for JAN2N6758 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of JAN2N6758?

    JAN2N6758 is a Microchip Transistors with Packaging: Bulk and Current - Continuous Drain (Id) @ 25°C: 9A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for JAN2N6758?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can JAN2N6758 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to JAN2N6758?

    Yes. If JAN2N6758 is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    JAN2N6758

    Manufacturer:

    Microchip

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-204AA, TO-3
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    -55°C~150°C TJ
    Packaging
    Bulk
    Series
    Military, MIL-PRF-19500/542
    Published
    1997
    JESD-609 Code
    e0
    Pbfree Code
    no
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    2
    ECCN Code
    EAR99
    Terminal Finish
    Tin/Lead (Sn/Pb)
    Technology
    MOSFET (Metal Oxide)
    Terminal Position
    BOTTOM
    Terminal Form
    PIN/PEG
    Pin Count
    2
    Reference Standard
    MIL-19500/542
    JESD-30 Code
    O-MBFM-P2
    Qualification Status
    Qualified
    Number of Elements
    1
    Configuration
    SINGLE WITH BUILT-IN DIODE
    Power Dissipation-Max
    4W Ta 75W Tc
    Operating Mode
    ENHANCEMENT MODE
    Case Connection
    DRAIN
    Turn On Delay Time
    35 ns
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Current - Continuous Drain (Id) @ 25°C
    9A Tc
    Gate Charge (Qg) (Max) @ Vgs
    39nC @ 10V
    Rise Time
    80ns
    Drain to Source Voltage (Vdss)
    200V
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±20V
    Fall Time (Typ)
    40 ns
    Turn-Off Delay Time
    60 ns
    Continuous Drain Current (ID)
    9A
    Gate to Source Voltage (Vgs)
    20V
    Drain Current-Max (Abs) (ID)
    9A
    Drain-source On Resistance-Max
    0.49Ohm
    DS Breakdown Voltage-Min
    200V
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant

    Products Detail

    JAN2N6758 Overview


    The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

    JAN2N6758 Features


    a continuous drain current (ID) of 9A
    the turn-off delay time is 60 ns
    a 200V drain to source voltage (Vdss)


    JAN2N6758 Applications


    There are a lot of Microsemi Corporation
    JAN2N6758 applications of single MOSFETs transistors.


    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
    • Battery Protection Circuit
    • Telecom 1 Sever Power Supplies

    Documents

    Datasheets:

    2N6756,58,60,62
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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