JAN2N6760 [Microchip]

JAN2N6760 Overview

The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5.5A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 22A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 400V in order to maintain normal operation.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

JAN2N6760 Features

a continuous drain current (ID) of 5.5A
based on its rated peak drain current 22A.
a 400V drain to source voltage (Vdss)

JAN2N6760 Applications

There are a lot of Microsemi Corporation
JAN2N6760 applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools