JAN2N6788 [Microchip]

JAN2N6788 Overview

This device conducts a continuous drain current (ID) of 6A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 6A.When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 24A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

JAN2N6788 Features

a continuous drain current (ID) of 6A
the turn-off delay time is 40 ns
based on its rated peak drain current 24A.
a 100V drain to source voltage (Vdss)

JAN2N6788 Applications

There are a lot of Microsemi Corporation
JAN2N6788 applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching