JAN2N6798U [Microchip]

JAN2N6798U Overview

This device conducts a continuous drain current (ID) of 5.5A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

JAN2N6798U Features

a continuous drain current (ID) of 5.5A
the turn-off delay time is 50 ns
a 200V drain to source voltage (Vdss)

JAN2N6798U Applications

There are a lot of Microsemi Corporation
JAN2N6798U applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching