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INA226AIDGSR
Texas Instruments
RFQ List
Yes. MSC027SMA330D/S by Microchip is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.
Pricing for MSC027SMA330D/S can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.
MSC027SMA330D/S is a Microchip Transistors with On-State Resistance (VGS = 20V) mΩ (milliohm): 25 and Continuous Drain Current Max (Ampere): 104. Review the product details or submit an RFQ if you need confirmation before purchase.
Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.
If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.
Yes. If MSC027SMA330D/S is unavailable, obsolete, or does not meet your required lead time, we can help check similar Microchip Transistors parts or compatible alternatives.
Looking for Pricing? Contact us for volume pricing.
IMPORTANT NOTICE
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.
The MSC027SMA330D/S is part of our MA Family of mSiC MOSFETs. This 3300V (3.3 kV) SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 25 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 104A. With maximum ratings reaching up to 150°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.
The SiC bare die MOSFETs offers system-level customization for highly efficient and compact advanced power electronics solutions. The compact design of the bare die package enables even higher power density, making it ideal for high-power, high-efficiency systems.
Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.
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