Is PC28F256P33B2F TR available for RFQ?

Yes. PC28F256P33B2F TR by Micron is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

Why is there no fixed price for PC28F256P33B2F TR?

Pricing for PC28F256P33B2F TR can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

What are the key specifications of PC28F256P33B2F TR?

PC28F256P33B2F TR is a Micron Interface ICs with Synchronous Burst Read Frequency: 52MHz and Programming Speed 3V Buffered: 1.46 MB/s. Review the product details or submit an RFQ if you need confirmation before purchase.

How fast can I get a quote for PC28F256P33B2F TR?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

How soon can PC28F256P33B2F TR be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

Can you suggest alternatives to PC28F256P33B2F TR?

Yes. If PC28F256P33B2F TR is unavailable, obsolete, or does not meet your required lead time, we can help check similar Micron Interface ICs parts or compatible alternatives.

PC28F256P33B2F TR - Micron | Electronic Components

Name: PC28F256P33B2F TR
Brand: Micron
SKU: PC28F256P33B2F TR
Availability: InStock

Type

Parameter

Access Time 1Gb EasyBGA

95ns

Access Time 1Gb TSOP

105ns

Access Time 2Gb EasyBGA

100ns

Access Time 512Mb EasyBGA

95ns

Access Time 512Mb TSOP

105ns

Data Bus Width

16-bit

Density

512Mb, 1Gb, 2Gb

Erase Cycles Per Block

100,000

Io Voltage Max

3.6V

Io Voltage Min

2.3V

Min Erase Cycles

100,000

Operating Temperature

-40°C ~ +85°C

Package

56-lead TSOP, 64-ball Easy BGA

Package Easy Bga

64-ball Easy BGA

Package Tsop

56-lead TSOP

Packing

Tray; Tape and reel

Process Technology

65nm

Programming Speed 3V Buffered

1.46 MB/s

Programming Speed BEFP

2 MB/s

RoHS Status

RoHS Compliant

Standby Current 1Gb

75µA

Standby Current 1gb

75µA (TYP)

Standby Current 512Mb

70µA

Standby Current 512mb

70µA (TYP)

Supply Voltage

2.3V ~ 3.6V

Synchronous Burst Read Frequency

52MHz

Synchronous Read Current Max

24mA

Synchronous Read Current Typ

21mA

The Micron Parallel NOR Flash memory is the latest generation of Flash memory devices. It offers high performance with synchronous-burst read mode, fast asynchronous access times, low power, flexible security options, and three industry-standard package choices. Manufactured using Micron 65nm process technology, it provides high performance at low voltage on a 16-bit data bus. Features include individually erasable memory blocks, buffered enhanced factory programming (BEFP), security options like OTP registers and password access, and support for both asynchronous and synchronous read modes.

Security: OTP registers, write protection, block locking, password access. Performance: 95-100ns access, 52 MHz synchronous burst read. Packages: Easy BGA and TSOP. Architecture: MLC, symmetric/asymmetric blocks. Voltage: 2.3-3.6V, low power. Software: Program/erase suspend, CFI compatible. Density: 512Mb, 1Gb, 2Gb. Reliability: -40°C to +85°C, 100k cycles.