Name: A2I25D025NR1
Brand: NXP
SKU: A2I25D025NR1

A2I25D025NR1 [NXP]

Part No:

A2I25D025NR1

Category:

RF Transistors

Manufacturer:

NXP

Description:

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Factory Lead Time

10 Weeks

Package / Case

TO-270-17 Variant, Flat Leads

Packaging

Tape & Reel (TR)

Published

2009

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

3 (168 Hours)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Voltage - Rated

65V

HTS Code

8542.33.00.01

Peak Reflow Temperature (Cel)

260

Frequency

2.69GHz

Time@Peak Reflow Temperature-Max (s)

40

Current - Test

59mA

Transistor Type

LDMOS (Dual)

Gain

31.9dB

Power - Output

3.2W

Voltage - Test

28V

RoHS Status

RoHS Compliant

Products Detail

A2I25D025NR1 Description

The A2I25D025NR1 wideband integrated circuit has on-chip matching built in, allowing it to operate between 2100 and 2900 MHz. This multi-stage construction can accommodate all common modulation formats used by cellular base stations and is rated for 26 to 32 V operation.

A2I25D025NR1 Features

At-Chip Matching (50 Ohm Input, DC Blocked)
Compensated for Integrated Quiescent Current Temperature
Activate/Deactivate Function
Created for Doherty Applications Designed for Digital Predistortion Error Correction Systems