BFM505,115 [NXP]

Name: BFM505,115
Brand: NXP
SKU: BFM505,115
Availability: InStock

Part No:

BFM505,115

Category:

Transistors

Manufacturer:

NXP

Description:

Dual NPN wideband transistor in a 6-pin SOT363 package for GHz-range RF applications.

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

Junction Temperature

175°C

Package

SOT363 (S-mini)

Storage Temperature

-65°C ~ +175°C

Collector Base Voltage

20V

Collector Capacitance Typ

0.31pF

Collector Emitter Voltage

8V

Dc Collector Current Max

18mA

Dc Current Gain

60 ~ 250

Dc Current Gain Typ

120

Dc Current Gain Typical

120

Emitter Base Voltage

2.5V

Feedback Capacitance Typ

0.22pF

Feedback Capacitance Typical

0.22pF

Insertion Power Gain Min

14 dB

Insertion Power Gain Typ

15 dB

Insertion Power Gain Typ 900MHz

15 dB

Marking Code

N0

Maximum Unilateral Power Gain Typ

17 dB

Maximum Unilateral Power Gain Typ 900MHz

17 dB

Noise Figure

1.1 dB

Noise Figure Max

1.6 dB

Noise Figure Min

1.1 dB

Noise Figure Typ 900MHz

1.1 dB

Noise Figure Typical

1.1 dB

Pin Count

6

Thermal Resistance Double Loaded

115 K/W

Thermal Resistance Junction To Soldering Double

115 K/W

Thermal Resistance Junction To Soldering Single

230 K/W

Thermal Resistance Single Loaded

230 K/W

Total Power Dissipation

500mW

Transition Frequency

9GHz

Transition Frequency Typical

9GHz

Products Detail

Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. Features include small size, temperature and h matched, low noise and high gain, high gain at low current and low capacitance at low voltage, and gold metallization for excellent reliability. Intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners.

Key Features

Small size
Temperature and h matched
Low noise and high gain
High gain at low current and low capacitance at low voltage
Gold metallization
Feedback capacitance: 0.22 pF
Transition frequency: 9 GHz
Insertion power gain: 15 dB at 900MHz
Noise figure: 1.1 dB at 900MHz

Application scenarios

Oscillator and buffer amplifiers
Balanced amplifiers
LNA/mixer

Product FAQ

1. Is BFM505,115 available for RFQ?

Yes. BFM505,115 by NXP is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for BFM505,115?

Pricing for BFM505,115 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of BFM505,115?

BFM505,115 is a NXP Transistors with Thermal Resistance Junction To Soldering Double: 115 K/W and Thermal Resistance Junction To Soldering Single: 230 K/W. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for BFM505,115?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can BFM505,115 be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to BFM505,115?

Yes. If BFM505,115 is unavailable, obsolete, or does not meet your required lead time, we can help check similar NXP Transistors parts or compatible alternatives.

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