
MT60B2G8HB-48B:A
Micron

Product Description:
The BFU550AR is a high-frequency NPN bipolar junction transistor (BJT) designed for RF applications. Manufactured by NXP USA Inc., this transistor is part of the BFU550 series, which is specifically designed for automotive applications and meets the AEC-Q101 standard.
Features:
Applications:
Alternative Parts:
Embedded Modules:
FAQs:
Q: What is the maximum current collector current of the BFU550AR? A: The maximum current collector current is 50 mA.
Q: What is the minimum DC current gain of the BFU550AR? A: The minimum DC current gain is 60 at an collector current of 15 mA and a collector-emitter voltage of 8 V.
Q: What is the packaging option for the BFU550AR? A: The BFU550AR is available in a tape and reel (TR) packaging option.
Q: What is the operating temperature range of the BFU550AR? A: The operating temperature range is -40°C to 150°C.
Q: Is the BFU550AR RoHS compliant? A: Yes, the BFU550AR is RoHS3 compliant.
Q: What is the factory lead time for the BFU550AR? A: The factory lead time is 13 weeks.
Q: What is the voltage collector-emitter breakdown of the BFU550AR? A: The voltage collector-emitter breakdown is 12 V.
Q: When was the BFU550AR published? A: The BFU550AR was published in 2011.
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