Product Description:

The BLF3G21-30 is a fixed inductor from NXP Semiconductors, designed for use in various electronic applications. This ceramic package-based inductor features a metal-oxide semiconductor (MOS) FET technology, making it suitable for high-frequency applications.

Features:

• Peak reflow temperature: NOT SPECIFIED
• Drain current: 4.5 A (max)
• Operating temperature: 150 °C (max)
• Surface mount: YES
• Package shape: RECTANGULAR
• Package style: FLANGE MOUNT
• Terminal form: FLAT
• Number of terminals: 2
• Polarity/channel type: N-CHANNEL
• Configuration: SINGLE
• FET technology: METAL-OXIDE SEMICONDUCTOR
• Transistor element material: SILICON
• Highest frequency band: ULTRA HIGH FREQUENCY BAND
• Breakdown voltage: 65 V (min)

Applications:

• Primary applications: Amplifiers, high-frequency applications
• Secondary applications: General-purpose power applications

Alternative Parts:

• None specified

Embedded Modules:

• None specified

FAQs:

Q: What is the peak reflow temperature of the BLF3G21-30? A: The peak reflow temperature is NOT SPECIFIED.

Q: What is the maximum drain current of the BLF3G21-30? A: The maximum drain current is 4.5 A.

Q: What is the operating temperature range of the BLF3G21-30? A: The operating temperature range is 0 °C to 150 °C.

Q: Is the BLF3G21-30 suitable for surface mount applications? A: Yes, the BLF3G21-30 is suitable for surface mount applications.

Q: What is the breakdown voltage of the BLF3G21-30? A: The breakdown voltage is 65 V (min).

Q: Is the BLF3G21-30 qualified for use in high-reliability applications? A: No, the BLF3G21-30 is not qualified for use in high-reliability applications.