BST52115 [NXP]

BST52115 Overview

With a collector emitter saturation voltage of 1.3 V, it offers maximum design flexibility.If the emitter base voltage is kept at 5 V, a high level of efficiency can be achieved.A transition frequency of 200 MHz is present in the part.There is a breakdown input voltage of 80 V volts that it can take.The product comes in the supplier device package of 0805.Collector current can be as low as 1 A volts at its maximum.

BST52115 Features

a collector emitter saturation voltage of 1.3 V
the emitter base voltage is kept at 5 V
a transition frequency of 200 MHz
the supplier device package of 0805

BST52115 Applications

There are a lot of NXP
BST52115 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting