MRF7S19170HR5 [NXP]

RF Power Field Effect Transistors designed for CDMA base station applications with frequencies from 1930 to 1990MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Features include typical Single-Carrier W-CDMA performance at VDD=28V, 50W average output power; capability to handle 5:1 VSWR; 170W CW output power at 1dB compression point; 100% PAR testing; internally matched for ease of use; integrated ESD protection; greater negative gate-source voltage range for improved Class C operation; designed for digital predistortion error correction systems; RoHS compliant; available in tape and reel packaging.