2N4123TA [Onsemi]

2N4123TA Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 2mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (30V maximal voltage).Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.

2N4123TA Features

the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
the supplier device package of TO-92-3

2N4123TA Applications

There are a lot of ON Semiconductor
2N4123TA applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting