CNY17F2 [Rochester]

The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. They feature UL and VDE recognition, closely matched current transfer ratio (CTR) to minimize unit-to-unit variation, very low coupled capacitance, and no chip to pin 6 base connection for minimum noise susceptibility. High breakdown voltage (70V minimum) is available in select groups.