
K4RAH165VB-BIWM
SAMSUNG

The FSFR2100 is a highly integrated power switch designed for high-efficiency half-bridge resonant converters. Offering everything necessary to build a reliable and robust resonant converter, the FSFR2100 simplifies designs and improves productivity, while improving performance. The FSFR2100 combines power MOSFETs with fast-recovery type body diodes, a highside gate-drive circuit, an accurate current controlled oscillator, frequency limit circuit, soft-start, and built-in protection functions. The high-side gate-drive circuit has a common-mode noise cancellation capability, which guarantees stable operation with excellent noise immunity. The fast-recovery body diode of the MOSFETs improves reliability against abnormal operation conditions, while minimizing the effect of the reverse recovery. Using the zero-voltage-switching (ZVS) technique dramatically reduces the switching losses and efficiency is significantly improved. The ZVS also reduces the switching noise noticeably, which allows a small-sized Electromagnetic Interference (EMI) filter. The FSFR2100 can be applied to various resonant converter topologies, such as: series resonant, parallel resonant, and LLC resonant converters.
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