MJE271 [Onsemi]

MJE271 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1500 @ 120mA 10V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 3V @ 1.2mA, 120mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2A.In the part, the transition frequency is 6MHz.A maximum collector current of 2A volts can be achieved.

MJE271 Features

the DC current gain for this device is 1500 @ 120mA 10V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 1.2mA, 120mA
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 6MHz

MJE271 Applications

There are a lot of ON Semiconductor
MJE271 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting