SS9012GBU [Onsemi]

SS9012GBU Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 112 @ 50mA 1V.The collector emitter saturation voltage is -180mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.A maximum collector current of 500mA volts can be achieved.

SS9012GBU Features

the DC current gain for this device is 112 @ 50mA 1V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA

SS9012GBU Applications

There are a lot of ON Semiconductor
SS9012GBU applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting