2SA2018TL [ROHM]

2SA2018TL Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -100mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 200mA.Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.The emitter base voltage can be kept at -6V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 260MHz.The breakdown input voltage is 12V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

2SA2018TL Features

the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 260MHz

2SA2018TL Applications

There are a lot of ROHM Semiconductor
2SA2018TL applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting