2SAR522EBTL [ROHM]

2SAR522EBTL Overview

DC current gain in this device equals 120 @ 1mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -120mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 350MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 200mA volts.

2SAR522EBTL Features

the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz

2SAR522EBTL Applications

There are a lot of ROHM Semiconductor
2SAR522EBTL applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting