2SB1733TL [ROHM]

2SB1733TL Overview

In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -150mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 25mA, 500mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.320MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.

2SB1733TL Features

the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 320MHz

2SB1733TL Applications

There are a lot of ROHM Semiconductor
2SB1733TL applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting