2SC5866TLQ [ROHM]

2SC5866TLQ Overview

In this device, the DC current gain is 120 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

2SC5866TLQ Features

the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 200MHz

2SC5866TLQ Applications

There are a lot of ROHM Semiconductor
2SC5866TLQ applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting