2STR2160 [STMicroelectronics]

Name: 2STR2160
Brand: STMicroelectronics
SKU: 2STR2160
Availability: InStock

Part No:

2STR2160

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

Low voltage fast-switching PNP power transistor

RoHS Status:

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

RoHS Status

RoHS Compliant

Part Life Cycle Code

Active

Package Description

ROHS COMPLIANT, PLASTIC PACKAGE-3

Pin Count

3

Reach Compliance Code

compliant

ECCN Code

EAR99

Factory Lead Time

29 Weeks, 4 Days

Collector Current-Max (IC)

1 A

Collector-Emitter Voltage-Max

60 V

Configuration

SINGLE

DC Current Gain-Min (hFE)

45

JESD-30 Code

R-PDSO-G3

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

3

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

PNP

Power Dissipation-Max (Abs)

0.5 W

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

Matte Tin (Sn)

Terminal Form

GULL WING

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Products Detail

2STR2160 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -260mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 480mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.

2STR2160 Features

the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 480mV @ 100mA, 1A
the emitter base voltage is kept at 5V

2STR2160 Applications

There are a lot of STMicroelectronics
2STR2160 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

Documents

Datasheets:

2STR2160 Datasheet

Product FAQ

1. Is 2STR2160 available for RFQ?

Yes. 2STR2160 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for 2STR2160?

Pricing for 2STR2160 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of 2STR2160?

2STR2160 is a STMicroelectronics Transistors with Time@Peak Reflow Temperature-Max (s): 30 and Collector-Emitter Voltage-Max: 60 V. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for 2STR2160?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can 2STR2160 be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to 2STR2160?

Yes. If 2STR2160 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

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