2ST501T Overview

The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 2000 @ 2A 2V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 2mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 350V volts that it can take.The product comes in the supplier device package of TO-220AB.A 350V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 4A volts at its maximum.

2ST501T Features

the DC current gain for this device is 2000 @ 2A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2mA, 2A
the emitter base voltage is kept at 5V
the supplier device package of TO-220AB

2ST501T Applications

There are a lot of STMicroelectronics
2ST501T applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting