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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. BUL416T STMicroelectronics

    BUL416T [STMicroelectronics]

    BUL416T
    BUL416T

    Part No:

    BUL416T

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    NPN 150°C TJ 250?A 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

    RoHS Status:

    Product FAQ

    1. Is BUL416T available for RFQ?

    Yes. BUL416T by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for BUL416T?

    Pricing for BUL416T can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of BUL416T?

    BUL416T is a STMicroelectronics Transistors with Packaging: Tube and DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA 5V and Collector Emitter Breakdown Voltage: 800V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for BUL416T?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can BUL416T be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to BUL416T?

    Yes. If BUL416T is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    BUL416T

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
    Factory Lead Time
    8 Weeks
    Contact Plating
    Tin
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-220-3
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Tube
    JESD-609 Code
    e3
    Part Status
    Active
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    ECCN Code
    EAR99
    Max Power Dissipation
    110W
    Terminal Position
    SINGLE
    Base Part Number
    BUL416
    Pin Count
    3
    Number of Elements
    1
    Configuration
    SINGLE
    Power - Max
    110W
    Transistor Application
    SWITCHING
    Polarity/Channel Type
    NPN
    Transistor Type
    NPN
    Collector Emitter Voltage (VCEO)
    800V
    Max Collector Current
    6A
    DC Current Gain (hFE) (Min) @ Ic, Vce
    18 @ 700mA 5V
    JEDEC-95 Code
    TO-220AB
    Vce Saturation (Max) @ Ib, Ic
    1.5V @ 1.33A, 4A
    Collector Emitter Breakdown Voltage
    800V
    Emitter Base Voltage (VEBO)
    9V
    hFE Min
    18
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    BUL416T Overview


    As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 18 @ 700mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1.33A, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.During maximum operation, collector current can be as low as 6A volts.

    BUL416T Features


    the DC current gain for this device is 18 @ 700mA 5V
    the vce saturation(Max) is 1.5V @ 1.33A, 4A
    the emitter base voltage is kept at 9V


    BUL416T Applications


    There are a lot of STMicroelectronics
    BUL416T applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting

    Documents

    Datasheets:

    BUL416T
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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