STB34N50DM2AG [STMicroelectronics]

STB34N50DM2AG Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 700 mJ.A device's maximum input capacitance is 1850pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 26A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 104A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

STB34N50DM2AG Features

the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 26A
based on its rated peak drain current 104A.
a 500V drain to source voltage (Vdss)

STB34N50DM2AG Applications

There are a lot of STMicroelectronics
STB34N50DM2AG applications of single MOSFETs transistors.

• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.
• DC-to-DC converters