Name: SCT10N120AG
Brand: STMicroelectronics
SKU: SCT10N120AG

SCT10N120AG [STMicroelectronics]

Part No:

SCT10N120AG

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

SiCFET (Silicon Carbide) N-Channel 690m ? @ 6A, 20V +25V, -10V 290pF @ 400V 22nC @ 20V 1200V TO-247-3

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mounting Type

Through Hole

Package / Case

TO-247-3

Operating Temperature

-55°C~200°C TJ

Series

Automotive, AEC-Q101

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Technology

SiCFET (Silicon Carbide)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Power Dissipation-Max

150W Tc

FET Type

N-Channel

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 400V

Current - Continuous Drain (Id) @ 25°C

12A Tc

Gate Charge (Qg) (Max) @ Vgs

22nC @ 20V

Drain to Source Voltage (Vdss)

1200V

Drive Voltage (Max Rds On,Min Rds On)

20V

Vgs (Max)

+25V, -10V

RoHS Status

RoHS Compliant

Products Detail

SCT10N120AG Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device?s housing in the proprietary HiP247? package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.