STB155N3LH6 [STMicroelectronics]

Name: STB155N3LH6
Brand: STMicroelectronics
SKU: STB155N3LH6

Part No:

STB155N3LH6

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3m ? @ 40A, 10V ±20V 3800pF @ 25V 80nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Factory Lead Time

20 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

-55°C~175°C TJ

Packaging

Cut Tape (CT)

JESD-609 Code

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

3MOhm

Terminal Finish

Matte Tin (Sn) - annealed

Additional Feature

ULTRA-LOW RESISTANCE

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STB155N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

110W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

110W

Case Connection

DRAIN

Turn On Delay Time

15 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

3800pF @ 25V

Current - Continuous Drain (Id) @ 25°C

80A Tc

Gate Charge (Qg) (Max) @ Vgs

80nC @ 5V

Rise Time

85ns

Drive Voltage (Max Rds On,Min Rds On)

5V 10V

Vgs (Max)

±20V

Fall Time (Typ)

40 ns

Turn-Off Delay Time

100 ns

Continuous Drain Current (ID)

80A

Threshold Voltage

JEDEC-95 Code

TO-252

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Avalanche Energy Rating (Eas)

525 mJ

Height

4.6mm

Length

10.75mm

Width

10.4mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB155N3LH6 Description

The STB155N3LH6 is an N-channel 30 V, 2.4 m? , 80 A, D2PAK, DPAK STripFET?VI DeepGATE? Power MOSFET. These products are N-channel Power MOSFETs made with a new gate structure and the 6th generation of STripFET? DeepGATE? technology. The Power MOSFETs that are produced have the lowest RDS(on) among all packages.

STB155N3LH6 Features

100% avalanche tested
Logic level drive
Low gate drive power
Fast switching speed
Easy advanced paralleling capability

STB155N3LH6 Applications

Switching applications
Automotive
Switch Mode Power Supplies (SMPS)
Residential, commercial, architectural and street lighting
DC-DC converters
Motor control

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

ST(B,D)155N3LH6

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.