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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. STD10NM60N STMicroelectronics

    STD10NM60N [STMicroelectronics]

    STD10NM60N
    STD10NM60N

    Part No:

    STD10NM60N

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 550m ? @ 4A, 10V ±25V 540pF @ 50V 19nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

    RoHS Status:

    Product FAQ

    1. Is STD10NM60N available for RFQ?

    Yes. STD10NM60N by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STD10NM60N?

    Pricing for STD10NM60N can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STD10NM60N?

    STD10NM60N is a STMicroelectronics Transistors with Packaging: Cut Tape (CT) and Current - Continuous Drain (Id) @ 25°C: 10A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STD10NM60N?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STD10NM60N be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STD10NM60N?

    Yes. If STD10NM60N is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STD10NM60N

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
    Factory Lead Time
    16 Weeks
    Mount
    Surface Mount
    Mounting Type
    Surface Mount
    Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    -55°C~150°C TJ
    Packaging
    Cut Tape (CT)
    JESD-609 Code
    e3
    Part Status
    Active
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    2
    ECCN Code
    EAR99
    Resistance
    600mOhm
    Terminal Finish
    Matte Tin (Sn) - annealed
    Technology
    MOSFET (Metal Oxide)
    Terminal Form
    GULL WING
    Peak Reflow Temperature (Cel)
    260
    Time@Peak Reflow Temperature-Max (s)
    30
    Base Part Number
    STD10
    Pin Count
    3
    JESD-30 Code
    R-PSSO-G2
    Number of Elements
    1
    Power Dissipation-Max
    70W Tc
    Element Configuration
    Single
    Operating Mode
    ENHANCEMENT MODE
    Power Dissipation
    70W
    Turn On Delay Time
    10 ns
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Input Capacitance (Ciss) (Max) @ Vds
    540pF @ 50V
    Current - Continuous Drain (Id) @ 25°C
    10A Tc
    Gate Charge (Qg) (Max) @ Vgs
    19nC @ 10V
    Rise Time
    12ns
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±25V
    Fall Time (Typ)
    15 ns
    Turn-Off Delay Time
    32 ns
    Continuous Drain Current (ID)
    10A
    Threshold Voltage
    3V
    Gate to Source Voltage (Vgs)
    25V
    Drain Current-Max (Abs) (ID)
    8A
    Drain to Source Breakdown Voltage
    600V
    Avalanche Energy Rating (Eas)
    200 mJ
    Nominal Vgs
    3 V
    Height
    2.4mm
    Length
    6.6mm
    Width
    6.2mm
    REACH SVHC
    No SVHC
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    STD10NM60N Description

    This device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.


    STD10NM60N Features

    100% avalanche tested

    Low input capacitance and gate charge

    Low gate input resistance


    STD10NM60N Applications

    Switching applications


    Documents

    Datasheets:

    STx10NM60NSTD10NM60N-STMicroelectronics-datasheet-10836187.pdfSTD10NM60N-STMicroelectronics-datasheet-62335410.pdfSTD10NM60N-STMicroelectronics-datasheet-17277909.pdfSTD10NM60N-STMicroelectronics-datasheet-14060378.pdfSTD10NM60N-STMicroelectronics-datasheet-14220845.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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