Name: STB43N65M5
Brand: STMicroelectronics
SKU: STB43N65M5

STB43N65M5 [STMicroelectronics]

Part No:

STB43N65M5

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 63m ? @ 21A, 10V ±25V 4400pF @ 100V 100nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material

SILICON

Manufacturer Package Identifier

D2PAK-0079457-A2

Operating Temperature

-55°C~150°C TJ

Packaging

Cut Tape (CT)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Technology

MOSFET (Metal Oxide)

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STB43N

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Number of Channels

1

Power Dissipation-Max

250W Tc

Operating Mode

ENHANCEMENT MODE

Power Dissipation

250W

Case Connection

DRAIN

Turn On Delay Time

73 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

4400pF @ 100V

Current - Continuous Drain (Id) @ 25°C

42A Tc

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Turn-Off Delay Time

12 ns

Continuous Drain Current (ID)

42A

Gate to Source Voltage (Vgs)

25V

Drain-source On Resistance-Max

0.063Ohm

Drain to Source Breakdown Voltage

650V

Avalanche Energy Rating (Eas)

650 mJ

Max Junction Temperature (Tj)

150°C

Height

4.83mm

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB43N65M5 Description

The STB43N65M5 is an N-channel Power MOSFET that combines the unique MDmeshTM M5 vertical manufacturing technology with the well-known PowerMESHTM horizontal architecture. The final product has a very low on-resistance, which makes it ideal for applications that require a lot of power and efficiency.