STP4NB50 [STMicroelectronics]

STP4NB50 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 220 mJ.A device's maximal input capacitance is 400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In terms of pulsed drain current, it has a maximum of 15.2A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).

STP4NB50 Features

the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 3.8A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 15.2A.

STP4NB50 Applications

There are a lot of STMicroelectronics
STP4NB50 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples