Name: STB28NM50N
Brand: STMicroelectronics
SKU: STB28NM50N

STB28NM50N [STMicroelectronics]

Part No:

STB28NM50N

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 158m ? @ 10.5A, 10V ±25V 1735pF @ 25V 50nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Factory Lead Time

26 Weeks

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

135mOhm

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STB28N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

150W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

150W

Turn On Delay Time

13.6 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1735pF @ 25V

Current - Continuous Drain (Id) @ 25°C

21A Tc

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Rise Time

19ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

52 ns

Turn-Off Delay Time

62 ns

Continuous Drain Current (ID)

21A

Threshold Voltage

Gate to Source Voltage (Vgs)

25V

Drain to Source Breakdown Voltage

500V

Pulsed Drain Current-Max (IDM)

84A

Height

4.6mm

Length

10.75mm

Width

10.4mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB28NM50N Description

STB28NM50N is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.

STB28NM50N Features

100% avalanche tested
Low gate input resistance
Low input capacitance and gate charge

STB28NM50N Applications

Industrial
Power management
Switching applications

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STx28NM50N STB28NM50N-STMicroelectronics-datasheet-14060389.pdf STB28NM50N-STMicroelectronics-datasheet-10838096.pdf STB28NM50N-STMicroelectronics-datasheet-62335195.pdf STB28NM50N-STMicroelectronics-datasheet-28966298.pdf STB28NM50N-STMicroelectronics-datasheet-11840057.pdf

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.