Name: STB21NM60ND
Brand: STMicroelectronics
SKU: STB21NM60ND

STB21NM60ND [STMicroelectronics]

Part No:

STB21NM60ND

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 220m ? @ 8.5A, 10V ±25V 1800pF @ 50V 60nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

170mOhm

Terminal Finish

Matte Tin (Sn) - annealed

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STB21N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

140W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

140W

Turn On Delay Time

18 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 50V

Current - Continuous Drain (Id) @ 25°C

17A Tc

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Rise Time

16ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

48 ns

Turn-Off Delay Time

70 ns

Continuous Drain Current (ID)

17A

Threshold Voltage

Gate to Source Voltage (Vgs)

25V

Drain to Source Breakdown Voltage

600V

Pulsed Drain Current-Max (IDM)

68A

Height

4.6mm

Length

10.75mm

Width

10.4mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB21NM60ND Description

STB21NM60ND is a single power MOSFET from the manufacturer STMicroelectronics. These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.

STB21NM60ND Features

? Intrinsic fast-recovery body diode

? Worldwide best RDS(on)*area amongst the fast recovery diode devices

? 100% avalanche tested

? Low input capacitance and gate charge

? Low gate input resistance

? Extremely high DV/DT and avalanche capabilities

STB21NM60ND Applications

? Switching applications

? Bridge topologies

? ZVS phase-shift converters

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STB21NM60ND-STMicroelectronics-datasheet-14897376.pdf STB21NM60ND-STMicroelectronics-datasheet-10835881.pdf STB21NM60ND-STMicroelectronics-datasheet-8328536.pdf STB21NM60ND-STMicroelectronics-datasheet-17900470.pdf

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.