Name: STB20NM60T4
Brand: STMicroelectronics
SKU: STB20NM60T4

STB20NM60T4 [STMicroelectronics]

Part No:

STB20NM60T4

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 290m ? @ 10A, 10V ±30V 1500pF @ 25V 54nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Factory Lead Time

26 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

290mOhm

Terminal Finish

Matte Tin (Sn) - annealed

Voltage - Rated DC

650V

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Current Rating

20A

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STB20N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

192W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

192W

Turn On Delay Time

25 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 25V

Current - Continuous Drain (Id) @ 25°C

20A Tc

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Rise Time

20ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±30V

Fall Time (Typ)

11 ns

Turn-Off Delay Time

42 ns

Continuous Drain Current (ID)

20A

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

600V

Pulsed Drain Current-Max (IDM)

80A

Avalanche Energy Rating (Eas)

650 mJ

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB20NM60T4 Description

The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company's PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt, and excellent avalanche characteristics. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar Competition's products.

STB20NM60T4 Features

High dv/dt and avalanche capabilities

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

STB20NM60T4 Applications

Switching applications

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STx20NM60(-1,FP)

RFQ

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Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

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Feature

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.